Method for in situ surface repassivation in back-contacted solar cells KU Leuven
A method (200) is provided for creating an interdigitated pattern for a back-contacted solar cell, including deposition (S201) of a first passivation layer stack (320) including a-Si of a first doping type, patterning (S202) the first passivation layer stack by using a first dry etching process to create one or more regions including the a-Si of the first doping type and one or more exposed regions of the surface, cleaning (S203) the one or more exposed regions of the surface from contaminants remaining from the first dry etching process, and depositing (S204) a second passivation layer stack ...