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Comparison of defects created by plasma-based ion implantation and conventional implantation of hydrogen in germanium KU Leuven
(001) n-type Ge has been implanted at given fluence and intermediate temperature with hydrogen ions using two processes: conventional in-line implantation and plasma based ion implantation. The as-created microstructure has been compared using transmission electron microscopy. In particular, it has been shown that the major differences observed are due to the implantation temperature, much higher during the PBII process. This suggests that ...
Optimization of ion implantation condition for depletion-type silicon optical modulators Universiteit Gent
Development of Wet Resist Strip Strategies based on the Identification of Structural Changes in the Resist after Arsenic Ion Implantation (Ontwikkeling van natte fotolak verwijderstrategieën gebaseerd op de identificatie van strukturele veranderingen in d KU Leuven
In the processing of integrated circuits, the source and drain of a p-type and n-type complementary metal-oxide-semiconductor field-effect transistor (CMOS) are defined by implantation of donor and acceptor ions respectively. During the ion implantation, a photoresist (PR) is used as a masking material. The removal of high dose (≥ 1E15 at/cm2) and low energy ion implanted photoresist (II-PR) after implantation of ultra shallow extension and halo ...
Ion implantation in Ge: structural and electrical investigation of the induced lattice damage & study of the lattice location of implanted impurities. KU Leuven
In deze doctoraatsthesis hebben we twee belangrijke implantatie-gerelate erde onderwerpen onderzocht in germanium: (1) de geïnduceerde structurel e en elektrische roosterschade na implantatie en (2) de roosterplaats va n geïmplanteerde onzuiverheden. Vooreerst hebben we de structurele roost erschade na ionenimplantatie in Ge gekarakteriseerd aan de hand van de r oostervervorming en de defectfractie in functie van verschillende implan ...
Ultra-low energy ion implantation of graphene: substitutional and intercalated atoms KU Leuven
Functionalizing two-dimensional (2D) materials typically involves the modification of their physical and chemical properties. In this context, several approaches are being explored: interaction with various substrates, creation of lattice defects (e.g., vacancies), addition of foreign atoms, clusters or molecules in adsorbed or intercalated forms, substitutional doping, among others. This thesis focuses on the incorporation of substitutional and ...
Bond defects in graphene created by ultralow energy ion implantation Interuniversitair Micro-Electronica Centrum vzw KU Leuven
Ultralow energy (ULE) ion implantation is being increasingly applied to the modification of 2D materials, in particular, for substitutional doping and intercalation of graphene. Implantation-induced defects, whether desired or not, have a strong impact on the properties of graphene. Significant research has been devoted to vacancy-related defects however, disorder induced by ion irradiation in the ULE limit, that is, for energies below the ...
Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure KU Leuven Universiteit Gent
We present an experimental lattice location study of Ga atoms in Ge after ion implantation at elevated temperature (250°C). Using extended x-ray absorption fine structure (EXAFS) experiments and a dedicated sample preparation method, we have studied the lattice location of Ga atoms in Ge with a concentration ranging from 0.5 at. % down to 0.005 at. %. At Ga concentrations ≤ 0.05 at. %, all Ga dopants are substitutional directly after ion ...
Synthesis of Few-Layered Transition-Metal Dichalcogenides by Ion Implantation of Chalcogen and Metal Species into Sapphire KU Leuven
The growth of transition-metal dichalcogenides (TMDCs) has been performed so far using most established thin-film growth techniques (e.g., vapor phase transport, chemical vapor deposition, molecular beam epitaxy, etc.). However, because there exists no self-limiting mechanism for the growth of TMDCs, none of these techniques allows precise control of the number of TMDC layers over large substrate areas. Here, we explore the ion implantation of ...