Theoretical Triangular Quantum Well Model for AlGaN/GaN HEMT Structure Used as Polar Liquid Sensor Vrije Universiteit Brussel
A triangular quantum well model is introduced to investigate a doped AlGaN/GaN high electron mobility transistor (HEMT) structure as a sensor for polar liquids. We calculate the drain current of the transistor as a function of the dipole moment of the polar liquid. The results show good agreement with experimental measurements for different polar liquids. It is also found that the device has large linear sensitivity by detecting the change of ...