XRD investigation of the crystalline quality of Sn-doped ß-Ga2O3 films deposited by the RF magnetron sputtering method KU Leuven
To increase the conductivity of β-Ga2O3 films, Sn doping in the β-Ga2O3 films has been explored using co-sputtering. Growth of β-Ga2O3 was confirmed by the XRD pattern of the undoped sample. However, it is shown that the Ga2O3 phase is transformed from the β to the γ phase by Sn doping, because of the increase of the phase transition temperature from the γ phase to the β phase. To improve the crystalline quality, additional annealing at 900 °C ...