Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrode KU Leuven Universiteit Gent
In this work, the physical and electrical properties of Srx Ti1-x Oy (STO)-based metal-insulator-metal capacitors (MIMcaps) with various compositions are studied in detail. While most recent studies on STO were done on noblelike metal electrodes (Ru, Pt), this work focuses on a low temperature (250 °C) atomic layer deposition (ALD) process, using an alternative precursor set and carefully optimized processing conditions, enabling the use of ...