Publicaties

A detailed conductive atomic force microscopic investigation is carried out to directly image the electron emission behavior for nitrogen-doped diamond nanorods (N-DNRs). Localized emission measurements illustrate uniform distribution of high-density electron emission sites from N-DNRs. Emission sites coupled to nano graphitic phases at the grain boundaries facilitate electron transport and thereby enhance field electron emission from N-DNRs, ...

Utilization of Au and nanocrystalline diamond (NCD) as interlayers noticeably modifies the microstructure and field electron emission (FEE) properties of hexagonal boron nitride nanowalls (hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3V mu m(-1), attaining FEE current density of 2.58mAcm(-2) and life-time stability of 105 min. Transmission electron microscopy reveals that the ...

Nanocrystalline diamond (NCD) field emitters have attracted significant interest for vacuum microelectronics applications. This work presents an approach to enhance the field electron emission (FEE) properties of NCD films by co-doping phosphorus (P) and nitrogen (N) using microwave plasma-enhanced chemical vapor deposition. While the methane (CH4) and P concentrations are kept constant, the N(2)concentration is varied from 0.2% to 2% and ...

Silver (Ag) ions are implanted in ultrananocrystalline diamond (UNCD) films to enhance the electron field emission (EFE) properties, resulting in low turn-on field of 8.5 V/mu m with high EFE current density of 6.2 mA/cm(2) (at an applied field of 20.5 V/mu m). Detailed nanoscale investigation by atomic force microscopy based peak force-controlled tunneling atomic force microscopy (PF-TUNA) and ultra-high vacuum scanning tunneling microscopy ...

Superior field electron emission (FEE) characteristics are achieved in edge-rich diamond-enhanced carbon nanowalls (D-ECNWs) grown in a single-step chemical vapor deposition process co-doped with boron and nitrogen. The structure consists of sharp, highly conductive graphene edges supplied by a solid, diamond-rich bottom. The Raman and transmission electron microscopy studies reveal a hybrid nature of sp(3)-diamond and sp(2)-graphene in these ...

Bias-enhanced nucleation and growth of diamond-graphite nanohybrid (DGH) films on silicon substrates by microwave plasma enhanced chemical vapor deposition using CH4/N-2 gas mixture is reported herein. It is observed that by controlling the growth time, the microstructure of the DGH films and, thus, the electrical conductivity and the electron field emission (EFE) properties of the films can be manipulated. The films grown for 30 min (DGHB30) ...

A "patterned-seeding technique" in combination with a "nanodiamond masked reactive ion etching process" is demonstrated for fabricating vertically aligned diamond-graphite hybrid (DGH) nanorod arrays. The DGH nanorod arrays possess superior field electron emission (FEE) behavior with a low turn-on field, long lifetime stability, and large field enhancement factor. Such an enhanced FEE is attributed to the nanocomposite nature of theDGHnanorods, ...

Diamond is eminent to own a series of outstanding physical and chemical properties, thus rendering it to be a strong cold cathode material for field electron emission (FEE) applications. FEE from diamond materials comprises the supply of electrons to the conduction band of the materials, transport through bulk, and lastly emission at the surface. In this chapter, the enhancement in the FEE characteristics of nitrogen incorporated ...

Low temperature (350 degrees C) grown conductive nanocrystalline diamond (NCD) films were realized by lithium diffusion from Cr-coated lithium niobate substrates (Cr /LNO). The NCD/Cr/LNO films showed a low resistivity of 0.01 Omega.cm and excellent field electron emission characteristics, viz. a low turn-on field of 2.3 V/mu m, a high-current density of 11.0 mA/cm(2) (at 4.9 V/m), a large field enhancement factor of 1670, and a life-time ...

In the present work, Au-Si eutectic layer was used to enhance the electrical conductivity/electron field emission (EFE) properties of Au-ion implanted ultrananocrystalline diamond (Au-UNCD) films grown on Si substrates. The electrical conductivity was improved to a value of 230 (Omega cm)(-1), and the EFE properties was enhanced reporting a low turn-on field of 2.1 V/mu m with high EFE current density of 5.3 mA/cm(2) (at an applied field of 4.9 ...