Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2 µm buffer thickness by local substrate removal KU Leuven
In this letter, we present a local substrate removal technology (under the source-to-drain region), reminiscent of through-silicon vias and report on the highest ever achieved breakdown voltage (V BD ) of AlGaN/GaN/AlGaN double-heterostructure FETs on a Si (111) substrate with only 2-μm-thick AlGaN buffer. Before local Si removal, V BD saturates at ∼700 V at a gatedrain distance (L GD ) 8μm. However, after etching away the substrate locally, we ...