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Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane KU Leuven
Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature (<700 °C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600650 and 500 °C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate (>5 /min). Trisilane permits the growth of Si at lower ...
Characterization of boron doped diamond epilayers grown in a NIRIM type reactor Universiteit Hasselt
Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The boron doped layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform ...
Tuning of strain and surface roughness of porous silicon layers for higher-quality seeds for epitaxial growth KU Leuven
UNLABELLED: Sintered porous silicon is a well-known seed for homo-epitaxy that enables fabricating transferrable monocrystalline foils. The crystalline quality of these foils depends on the surface roughness and the strain of this porous seed, which should both be minimized. In order to provide guidelines for an optimum foil growth, we present a systematic investigation of the impact of the thickness of this seed and of its sintering time prior ...
Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy KU Leuven
© 2017 American Physical Society. The mechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs nanowire (NW) grown by selective area epitaxy (SAE) is studied. We demonstrate that the crystal structure in InAs NW grown by SAE can be controlled using basic growth parameters, and wurtzitelike InAs NWs are achieved. We link the polytypic InAs NWs SAE to the reconstruction of the growth front (111)B surface. ...
Epitaxy of van der Waals Materials: a Fundamental and Exploratory Study Focused on Molecular Beam Epitaxy of WSe2 KU Leuven
The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovation. Two-dimensional van der Waals materials are a promising class of new materials awaiting their integration into the semiconductor industry. The transition metal dichalcogenides and in more specific the WSe2 compound, are predicted as one of the most interesting van der Waals materials to complement the silicon-based semiconductor ...
Origin of Defects in Directed Self-Assembly of Diblock Copolymers Using Feature Multiplication (Over het ontstaan van defecten bij patroon vermenigvuldiging door middel van Geleide Zelf-Assemblage van diblock copolymeren) KU Leuven
Directed self assembly (DSA) of block copolymers (BCP) has been considered a promising technology for nano-patterning. Since it was included in the 2009 International Technology Roadmap for Semiconductors (ITRS), efforts have been invested to explore the potential of this technique to reach the 16nm half-pitch node and below. BCP can micro-phase separate and self-assemble into ordered structures with spatial periodicity and dimensions of about ...