Researcher

Ben Schoenaers

Disciplines:Condensed matter physics and nanophysics

Publications

1 - 10 of 14

Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR(2020)
Published in: Journal of Chemical Physics
ISSN: 0021-9606
Issue: 23
Volume: 152
Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation(2020)
Published in: Ecs Journal Of Solid State Science And Technology
ISSN: 2162-8769
Issue: 9
Volume: 9
Atomic assessment of paramagnetic defects in 2-dimensional semiconductor layers: MoS2(2020)
Degradation of sulfamethoxazole by heat-activated persulfate oxidation: elucidation of the degradation mechanism and influence of process parameters(2020)
Published in: Chemical Engineering Journal
ISSN: 1385-8947
Volume: 379
Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding(2020)
Pages: 464 - 467
Number of pages: 4
Aryl-viologen pentapeptide self-assembled conductive nanofibers(2019)
Published in: Chemical Communications
ISSN: 1359-7345
Issue: 51
Volume: 55
Pages: 7354 - 7357
Thermal stability and temperature dependent electron spin resonance characteristics of the As acceptor in geological 2H-MoS2(2019)
Published in: Semiconductor Science and Technology
ISSN: 0268-1242
Issue: 3
Volume: 34
Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism(2018)
Published in: Chemistry of Materials
ISSN: 0897-4756
Issue: 21
Volume: 30
Pages: 7648 - 7663
Structural Properties of Al-O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density(2018)
Published in: ACS Applied Materials and Interfaces
ISSN: 1944-8244
Issue: 36
Volume: 10
Pages: 30495 - 30505
Nitrogen acceptor in 2H-polytyp synthetic MoS2 assessed by multifrequency electron spin resonance(2018)
Published in: Journal of Vacuum Science and Technology A
ISSN: 0734-2101
Issue: 5
Volume: 36

Researcher

Ben Schoenaers

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