Metal-organic graphene analogues for memory devices (MOGRAM)

Electronics and computers shape the world as we know it. To overcome the disadvantages of current silicon-based memories, resistive memory technology is highly promising because of its potential for miniaturization, fast operation speed, and low power consumption. This technology is based on materials that can switch between a distinct high and low resistance states that can be used to store information. To overcome the current lack in structure-property relationships and ‘designability’ for these resistive switching materials, the MOGRAM project will develop resistive memory technology based on crystalline coordination polymers (CCPs). These materials form by the self-assembly of metal ions and polytopic organic ligands. Their structural and electronic properties can be rationally tuned through the choice of ligands and metal ions. The project will focus on memory cells based on electroactive conductive CCPs that can be fabricated and miniaturized efficiently. Because of the crystallinity and the ‘designer’ nature of CCPs, these devices will (i) have a large difference between high and low resistance states; (ii) show low variability; (iii) straightforward scalability; and (iv) enable to unequivocally establish structure-property relationships.