Publication

A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1-x-based Layers for Ovonic Threshold Switching Selectors

Published in: Ecs Journal Of Solid State Science And Technology

ISSN: 2162-8769

Issue: 4

Volume: 9

Publication year:2020

Keywords:Materials science, Applied physics

BOF-keylabel:yes

IOF-keylabel:yes

BOF-publication weight:1

CSS-citation score:1

Authors from:Government, Higher Education

Accessibility:Closed

Review status:Peer-reviewed