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Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions
Journal Contribution - Journal Article
© 2018 Author(s). Analogous device parameters in both the parallel (P) and anti-parallel (AP) states ensure a symmetric spin-transfer-torque magnetic random-access memory operation scheme. In this study, however, we observe an increasing asymmetry in the performance metrics with operating temperature of the bottom-pinned perpendicular magnetic tunnel junction (p-MTJ) devices. A temperature-dependent increase in the contribution of the stray field is observed in the tunneling magnetoresistance loop analysis. The switching current for P-to-AP decreases by 30% in the thermally activated switching regime by increasing the temperature from 300 K to 400 K, while it remains similar for AP-to-P. In addition, with the same temperature range, the thermal stability factor for the P state decreases 20% more than that for the AP state. We attribute those observations to the increase in the overcompensation of the stray field from the synthetic anti-ferromagnet structure. Saturation magnetization (M S ) of the [Co/Pt] x -based multilayers is much less affected by temperature [M S (400 K)/M S (300 K) = 97%] compared to that of the CoFeB-based multilayers (88%). Such an impact can be more severe during the electrical switching process due to the Joule heating effect. These results suggest that, to understand and to evaluate the performance in a wide range of temperatures, it is crucial to consider the contribution of the entire magnetic components in the p-MTJ stack.
Journal: Applied Physics Letters
Number of pages: 5