Patents

An integrated circuit chip having fin-based active devices in the front end of line, and an electrical connection between a buried interconnect rail and a contact area on a semiconductor fin, such as an epitaxially grown source or drain contact area of a transistor, is disclosed. In one aspect, the electrical connection is realized without the intervention of a metallization level formed above the active devices in the IC. Instead, an interconnect via is produced between the buried interconnect rail and a lateral portion of the contact area, wherein the lateral portion is directly contacted ...

The invention is related to an integrated circuit chip having fin-based active devices in the front end of line, and in particular to the electrical connection between a contact area (5a) on a semiconductor fin (1a), such as an epitaxially grown source or drain contact area of a transistor, and a buried interconnect rail (4). According to the invention, the connection is realized without the intervention of a metallization level formed above the active devices in the IC. Instead, an interconnect via (15) is produced between the rail (4) and a lateral portion of the contact area (5a), wherein ...

Provided herein are methods for recanalization of occluded blood vessels in a subject having an infarction. The method includes a step of administering to the subject a therapeutically effective amount of isolated ADAMTS13 protein at particular dosages and ranges of times after detection of the infarction. As described herein, ADAMTS13 advantageously recanalizes occluded blood vessels and reduces infarction size, even when administered a prolonged period after stable occlusion. Accordingly, such methods and compositions are useful for the treatment of infractions caused by blood vessel ...

Provided herein are methods for recanalization of occluded blood vessels in a subject having an infarction. The method includes a step of administering to the subject a therapeutically effective amount of isolated ADAMTS13 protein at particular dosages and ranges of times after detection of the infarction. As described herein, ADAMTS13 advantageously recanalizes occluded blood vessels and reduces infarction size, even when administered a prolonged period after stable occlusion. Accordingly, such methods and compositions are useful for the treatment of infractions caused by blood vessel ...

According to an aspect there is provided an illumination system for illumination of a sample in a container, such as a well of a microplate or a petri dish, the container comprising a bottom surface and side walls which together define a volume for receiving the sample, the illumination system comprising: at least one light source; a mask comprising an opaque portion, preventing light from passing through the mask, and an at least partially transparent portion, allowing light to pass through the mask; wherein the illumination system is adapted to be positioned such that the light generated by ...

According to an aspect there is provided an illumination system for illumination of a sample in a container, such as a well of a microplate or a petri dish, the container comprising a bottom surface and side walls which together define a volume for receiving the sample, the illumination system comprising: * at least one light source; * a mask comprising an opaque portion, preventing light from passing through the mask, and an at least partially transparent portion, allowing light to pass through the mask; * wherein the illumination system is adapted to be positioned such that the light ...

A Silicon on Insulator (SOI) structure and a method for creating an undercut (UCUT) in an SOI structure, in particular, for a 300mm SOI platform, is provided. In particular, the method includes fabricating one or more cavities in a silicon substrate underneath an insulator layer of the SOI structure by performing a first dry etch of the silicon substrate to create the one or more cavities, performing a first wet etch of the silicon substrate to expand the one or more cavities, performing a second dry etch of the silicon substrate to further expand the one or more cavities and to break silicon ...

The present disclosure relates to a process for creating an undercut (UCUT) in a Silicon on Insulator (SOI) structure, in particular, a process for a 300mm SOI platform. To this end, the disclosure provides a method for fabricating one or more cavities in a silicon substrate underneath an insulator layer of the SOI structure. The method comprises performing a first dry etch of the silicon substrate to create the one or more cavities, performing a first wet etch of the silicon substrate to expand the one or more cavities, performing a second dry etch of the silicon substrate to further expand ...

An electrode arrangement for stimulating and recording electrical signals in biological matter comprises: an array (110) of electrodes (112), wherein electrodes (112) are configured to be switchable between stimulating and recording of electrical signals; a control unit (120), wherein the control unit (120) is configured to select a plurality of electrodes (112) to form a combined macroelectrode site (114) for providing a stimulating signal, wherein the control unit (120) is further configured to determine a perimeter electrode (112b) and a central electrode (112a), wherein the perimeter ...

An electrode arrangement for stimulating and recording electrical signals in biological matter comprises: an array (110) of electrodes (112), wherein electrodes (112) are configured to be switchable between stimulating and recording of electrical signals; a control unit (120), wherein the control unit (120) is configured to select a plurality of electrodes (112) to form a combined macroelectrode site (114) for providing a stimulating signal, wherein the control unit (120) is further configured to determine a perimeter electrode (112b) and a central electrode (112a), wherein the perimeter ...