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Publication

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Journal Contribution - Journal Article

Published in: JOURNAL OF APPLIED PHYSICS

ISSN: 0021-8979

Issue: 20

Volume: 130

Publication year:2021

Keywords:Applied physics

WoS Id: 000723254200001
DOI: https://doi.org/10.1063/5.0066681
Institutional Repository URL: https://lirias.kuleuven.be/3649037
ArticleNumber: ARTN 205701

BOF-keylabel:yes

IOF-keylabel:yes

BOF-publication weight:1

CSS-citation score:1

Authors:International

Authors from:Government, Higher Education

Accessibility:Open

Review status:Peer-reviewed

See also: Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy