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Publication
Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping
Journal Contribution - Journal Article
Published in: IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN: 0018-9383
Issue: 10
Volume: 71
Pages: 5949 - 5955
Publication year:2024
Keywords:DENSITY, Electrical & electronic engineering, Applied physics
Accessibility:Open