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Researcher
Marc Heyns
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → Today - Surface and Interface Engineered Materials (Division)
Member
From1 Jan 2012 → 31 Jul 2020 - Department of Materials Engineering (Department)
Member
From1 Oct 2007 → 31 Dec 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 2005 → 30 Sep 2007
Projects
21 - 28 of 28
- III-V Nanowire Epitaxy for Ultimate Logic Device ScalingFrom3 Sep 2013 → 10 Oct 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- Graphene-Metal Contact Engineering and Graphene InterconnectsFrom1 Nov 2012 → 29 Jan 2019Funding: BOF - Doctoral projects
- Fundamental challenges in Semiconductor Research.From1 Oct 2012 → 30 Sep 2017Funding: BOF - Concerted Research Project from 1994
- 2D transition metal dichalcogenides for beyond silicon logic devices: improving the Metal/MoS2 interface through molecular doping.From1 Oct 2012 → 24 May 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- Ab initio simulations of novel 2D materials and interfaces for advanced ICT applicationsFrom1 Oct 2012 → 23 Feb 2017Funding: BOF - Doctoral projects
- Integration of a IIIV p-channel tunnel-field-effect transistor for ultra-low power nano-CMOS applications.From3 Oct 2011 → 1 Jul 2016Funding: IWT personal funding - strategic basic research grants
- Advance semiconductor wetting and drying: limitations, defect formation and solutionsFrom3 Oct 2011 → 22 Sep 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Properties of Defects in GeSn and III-V Based HeterostructuresFrom6 Sep 2011 → 17 Dec 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 534
- 2D Materials: Theoretical Study of Magnetic and Contact Properties(2023)
Authors: Peter Reyntjens, Bart Sorée, Marc Heyns
- Unraveling the impact of nano-scaling on silicon field-effect transistors for the detection of single-molecules(2023)
Authors: Marc Heyns, Koen Martens
Pages: 2354 - 2368 - GHz Dynamics of Magnetoelectric Coupling at the Nanoscale(2022)
Authors: Frederic Vanderveken, Bart Sorée, Marc Heyns
- Design and Characterization of Quantum Devices for Superconducting Qubit Implementation(2022)
Authors: Jeroen Verjauw, Marc Heyns
- Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms(2022)
Authors: Jeroen Verjauw, Rohith Acharya, Jacques Van Damme, Marc Heyns
- Lifetime Assessment of InxGa1-xAs n-Type Hetero-Epitaxial Layers(2022)
Authors: Clement Merckling, Marc Heyns
- Spintronic Logic Based on Magnetic Domain Walls(2022)
Authors: Eline Raymenants, Marc Heyns
- Modelling Topological and Magnetic Materials for Charge and Spin-based Devices(2022)
Authors: Sabyasachi Tiwari, Bart Sorée, Kristiaan Temst, Marc Heyns
- Understanding Interface Interactions in Graphene-Ruthenium Hybrids for Next Generation Interconnects(2022)
Authors: Swati Achra, Marc Heyns, Bart Sorée
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs System(2022)
Authors: Po-Chun Hsu, Marc Heyns
Patents
1 - 7 of 7
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)
- A bilayer graphene tunneling field effect transistor (Inventor)
- Bilayer graphene tunneling field effect transistor (Inventor)
- Graphene-based semiconductor device (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)