Nonlinear Characterization and Modeling of Magnetic Tunnel Junction (MTJ)-Based Magnetic Sensors KU Leuven
A magnetic tunnel junction (MTJ) consists of the free layer (FL), pinned layer (PL), and the antiferromagnetic (AFM) layer. The AFM layer fixes the PL’s magnetization orientation via exchange coupling. The FL and PL are separated by a thin, crystalline MgO barrier. Electrons tunnel through the MgO insulating layer resulting in electrical conductivity, which depends on the relative orientation between the magnetizations of the FL and PL. The ...