High-K and magnetic material for Voltage controlled (VCMA) MRAM applications KU Leuven
With the need for more power efficient and better performing memory devices, DRAM and SRAM are reaching their limit for further improvements. One promising replacement is magnetic random-access memory, or MRAM, where the bit state is stored in nano-scale magnetic layers. Due to its magnetic nature, MRAM is non-volatile thus requiring no external power to maintain the stored information. MRAM products are already commercially available though ...