RTP requirements for CMOS integration of dual work function phase controlled Ni-FUSI (fully silicided) gates with simultaneous silicidation of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON KU Leuven
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of nMOS (NiSi) and pMOS (Ni-rich) gates on HfSiON is demonstrated. Linewidth independent phase control with smooth threshold voltage (Vt) roll-off characteristics is achieved for NiSi, Ni2Si and Ni31Si12 FUSI gates by controlling the Ni-to-Si reacted ratio through optimization of the thermal budget of silicidation (prior to selective Ni removal). A ...