Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors

© 2015 Elsevier B.V. All rights reserved. A capacitance-voltage (CV) study on large area CVD single layer graphene MOS capacitors has been carried out. The CV features are carefully examined to reveal the electronic origins of the observed frequency and bias dependence. In this study we investigate the frequency dispersion, propose the definition and extraction of the apparent flat-band Vafb, and finally perform the low temperature CV measurement to deduce the doping level of the graphene MOSCAPs.

Jaar van publicatie:2015

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:1

CSS-citation score:1

Authors from:Government, Higher Education

Toegankelijkheid:Closed