Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallization. The material is characterized by the micro-Raman spectroscopy and x-ray diffraction technique. The detector presents an extremely low dark current of 100 fA at - 100 V dc bias for large device area as high as 3.1 mm(2). It also exhibits a rejection ratio between 180 and 300 nm of three orders of magnitude with a very sharp cut-off wavelength at 203 nm (similar to 6.1 eV). The simulation to optimize the photodiode topology is based on a 2D energy-balance model using the COMSOL (R) software. Simulation performed for different spacing for a given bias between electrodes show that a compromise must be found between the dark current and the responsivity for the optimization of the device performance. The measurement results are in good agreement with the model predictions.

Jaar van publicatie:2010

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:1

CSS-citation score:1

Auteurs:International

Authors from:Government, Higher Education, Private

Toegankelijkheid:Closed