A bilayer graphene tunneling field effect transistor

A bilayer graphene tunneling field effect transistor comprising: a. A bilayer graphene layer, and b. At least a top gate electrode and a bottom gate electrode, wherein said at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon appropriate biasing of the gate electrodes: i. a source region, ii. a channel region, and iii. a drain region.

Octrooi-publicatienummer: EP2887398

Jaar aanvraag: 2014

Jaar toekenning: 2017

Jaar van publicatie: 2017

Status: Toegewezen

Technologiedomeinen: Semiconductoren

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven