Method for fabricating a dual work function semiconductor device

A method for manufacturing a dual work function semiconductor device is described. The method comprises providing a semiconductor substrate (100); providing a gate dielectric layer (104) on and in contact with the semiconductor substrate; forming a metal layer (105) on and in contact with the gate dielectric layer; forming a layer of gate filling material (106) on and in contact with the metal layer; patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first gate stack and a second gate stack; forming in the semiconductor substrate source and drain regions (109) for both the first gate stack and the second gate stack; thereafter removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer; converting the exposed metal layer into an metal oxide layer (1051); reforming the second gate stack with another gate filling material (115).

Octrooi-publicatienummer: EP2584601

Jaar aanvraag: 2009

Jaar toekenning: 2015

Jaar van publicatie: 2015

Status: Toegewezen

Technologiedomeinen: Semiconductoren

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven