Method of manufacturing a semiconductor device and semiconductor devices resulting therefrom

A method is disclosed for manufacturing a semiconductor device, the method comprising - providing a substrate comprising a main surface with a non flat topography, the surface comprising substantial topography variations; - forming a first capping layer over the main surface; wherein, during formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations and the local defects being suitable for allowing a predetermined fluida to pass through. Associated membrane layers, capping layers and microelectronic devices have also been disclosed.

Octrooi-publicatienummer: EP2327659

Jaar aanvraag: 2018

Jaar toekenning: 2018

Jaar van publicatie: 2018

Status: Toegewezen

Technologiedomeinen: Microstructuur en nanotechnologie

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven