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Characterization of boron doped diamond epilayers grown in a NIRIM type reactor

Tijdschriftbijdrage - Tijdschriftartikel

Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The boron doped layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases. (C) 2008 Elsevier B.V. All rights reserved.
Tijdschrift: Diamond and Related Materials
ISSN: 0925-9635
Issue: 7-10
Volume: 17
Pagina's: 1330 - 1334
Trefwoorden:CVD diamond, homoepitaxy, p-type doping, electrical properties, optical properties
BOF-publication weight:1
CSS-citation score:2