Chiral switching driven spin torque majority gates. Interuniversitair Micro-Electronica Centrum vzw
A magnetic device (200) comprising at least two MTJ pillars (100), each MTJ pillar (100) comprising a stack of a heavy metal layer portion (110a, 110b), a second free magnetic layer portion (120a, 120b), a spacer portion (130a, 130b), a first free magnetic layer portion (140a, 140b), a tunnel barrier layer portion (150a, 150b), and a fixed magnetic layer portion (160a, 160b), wherein at least the heavy metal layer portions (110a, 110b), the second free magnetic layer portions (120a, 120b) and the spacer portions (130a, 130b) are extending between the MTJ pillars (100) through respectively an ...