Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers Universiteit Hasselt
Carrier dynamics under interband carrier injection conditions (213nm) was studied in undoped and boron-doped microcrystalline diamond layers with different grain size. The grain size, determined by scanning electron microscopy and electron backscattered diffraction, varied from 130m on the growth side to approximate to 1-2m on the nucleation side of a 1.0mm-thick undoped layer. Carrier lifetimes measured by differential transmittivity (DT) ...