III-V-on-silicon nanoridge opto-electronic device with a regrown fin structure. Interuniversitair Micro-Electronica Centrum vzw
A monolithic III-V on Si nano-ridge waveguide with the following layer composition from bottom (novel items in bold): ? A highly n-doped GaAs contact region reaching into the body of the ridge ? An unintentionally doped GaAs region containing the active region (e.g. QWs or QDs) ? A highly p-doped GaAs ridge body region ? A highly p-doped GaAs contact region ? A conformal unintentionally doped high band-gap material region used to cap the structure ? A narrow highly p-doped GaAs fin that is defined by regrowth in a narrow dielectric trench etched after initial ridge growth + dielectric fill + ...