Fabrication method for a MEMS device. Interuniversitair Micro-Electronica Centrum vzw
The present invention relates to the field of Microelectromechanical Systems (MEMS) devices. In particular, the invention relates to a MEMS device combining a MEMS layer and a Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuit (IC), and its fabrication method. The fabrication method comprises: processing the MEMS layer on a first semiconductor substrate, the MEMS layer including one or more movable structures and one or more anchor structures; processing one or more first contacts on the first semiconductor substrate, each first contact being processed into one of the anchor ...