A method for fabricating a 3D ferroelectric memory Interuniversitair Micro-Electronica Centrum vzw
The present invention relates generally to memory devices, specifically to 3D ferroelectric memory devices. The invention provides a 3D ferroelectric memory device, a method for fabricating the 3D ferroelectric memory device, and a method for conditioning a 3D ferroelectric memory device. The 3D ferroelectric memory device exploits programmed memory cells as selector devices. The 3D ferroelectric memory device comprises a stack comprising a plurality of gate electrode layers and spacer layers, which are alternatingly arranged one on the other along a first direction; a semiconductor channel ...