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Onderzoeker
Po-Chun Hsu
- Disciplines:Keramische en glasmaterialen, Materialenwetenschappen en -techniek, Halfgeleidermaterialen, Andere materiaaltechnologie
Affiliaties
- Functionele materialen (SIEM) (Afdeling)
Lid
Vanaf1 aug 2020 → 28 feb 2022 - Functionele Materialen (Afdeling)
Lid
Vanaf17 sep 2016 → 31 jul 2020
Projecten
1 - 1 of 1
- Elektrische modellering en karakterisering van „extended defects“ in n type InxGa1-xAs-systeemVanaf23 aug 2017 → 11 jan 2022Financiering: Eigen Middelen zoals patrimonium, inschrijvingsgelden, giften, ....
Publicaties
1 - 10 van 21
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs System(2022)
- Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy(2021)Gepubliceerd in: Physica Status Solidi A, Applications and Materials ResearchISSN: 1862-6300Issue: 23Volume: 218
- Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy(2021)Gepubliceerd in: JOURNAL OF APPLIED PHYSICSISSN: 0021-8979Issue: 20Volume: 130
- Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration(2020)Gepubliceerd in: IEEE TRANSACTIONS ON ELECTRON DEVICESISSN: 0018-9383Issue: 11Volume: 67Pagina's: 4827 - 4833
- Polarization Control of Epitaxial Barium Titanate (BaTiO3) Grown by Pulsed-Laser Deposition on a MBE-SrTiO3/Si(001) Pseudo-Substrate(2020)Gepubliceerd in: JOURNAL OF APPLIED PHYSICSISSN: 0021-8979Issue: 10Volume: 128Pagina's: 104104 - 104104
- A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1-x-based Layers for Ovonic Threshold Switching Selectors(2020)Gepubliceerd in: Ecs Journal Of Solid State Science And TechnologyISSN: 2162-8769Issue: 4Volume: 9
- Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers(2020)Gepubliceerd in: Ecs Journal Of Solid State Science And TechnologyISSN: 2162-8769Issue: 3Volume: 9
- Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers (vol 9, 033001, 2020)(2020)Gepubliceerd in: Ecs Journal Of Solid State Science And TechnologyISSN: 2162-8769Issue: 3Volume: 9
- The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As(2019)Gepubliceerd in: Journal of Physics D, Applied PhysicsISSN: 0022-3727Issue: 48Volume: 52
- Observation of the Stacking Faults in In0.53Ga0.47As by Electron Channeling Contrast Imaging(2019)Gepubliceerd in: Physica Status Solidi A, Applications and Materials ResearchISSN: 1862-6300Issue: 17Volume: 216