Tunnel field effect transistor device and method for making the device

A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer (6), a highly doped source layer (2), a channel layer (5), a gate dielectric layer (8) and a gate electrode layer (9), the gate dielectric layer (8) extending along the source layer (2), and a highly doped pocket layer (3) extending in between and along the gate dielectric layer (8) and the source layer (2), characterized in that the pocket layer (3) extends to between and along the source layer (2) and the channel layer (5).

Octrooi-publicatienummer: EP2674978

Jaar aanvraag: 2012

Jaar toekenning: 2020

Jaar van publicatie: 2020

Status: Toegewezen

Technologiedomeinen: Semiconductoren

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven