Lock-in averaging for semiconductor diagnostics.

Examples include a method for localizing one or more defects in a semiconductor device. The method includes switching the semiconductor device on and off at a first frequency and switching an irradiating device on and off at a second frequency. The method also includes acquiring images of the semiconductor device and lock-in averaging the images with a first reference signal having the first frequency and a first phase, to obtain amplitudes indicative of temperatures at a surface of the semiconductor device and/or phase signals indicative of a depth location of the one or more defects in the semiconductor device. The method also includes lock-in averaging the images with a second reference signal having the second frequency and a second phase to obtain a topography of the surface of the semiconductor device. The first frequency is different from the second frequency and/or the first phase is different from the second phase.

Octrooi-publicatienummer: US20250155381

Bron: USPTO

Jaar van publicatie: 2025

Status: Aangevraagd

Technologiedomeinen: undefined