Zero-field switching for sot technology

A magnetic tunnel junction (MTJ) device (100) is provided, including a spin-orbit torque (SOT) mediating layer (110), a hard-mask layer (120) used to define a shape of the SOT layer, a magnetic tunnel junction 130 arranged between the SOT layer and the hard-mask layer and including at least a free layer (134) and a reference layer (132) separated by a non-magnetic barrier layer (136). The device further includes at least two electrical accesses (140, 142) arranged to contact the SOT layer to pass a write current therethrough. To provide field-free switching of the free layer, the device further includes a ferromagnetic element (124) as at least one of a ferromagnetic sublayer (124) of the hard-mask and a material (124) in the electrical accesses. A method of fabricating such a device is also provided.

Octrooi-publicatienummer: EP3671874

Bron: EPO

Jaar van publicatie: 2020

Status: Toegewezen

Technologiedomeinen: undefined