Octrooien

The present invention relates to a method (1) of transferring a graphene layer onto a target substrate or support structure. The method comprises obtaining (2) a metal foil (12) onto which the graphene layer (11) is provided, stabilizing the graphene layer (11) by applying (4) a layer (13) of a cellulose-based polymer onto the graphene layer (11), and placing (5) the metal foil (12) with the graphene and the polymer layers in or on an etching solution (25) to dissolve the metal foil (12) supporting the graphene layer (11). The method comprises diluting and/or neutralizing (6) the etching ...

The present invention relates to a method (1) of transferring a graphene layer onto a target substrate or support structure. The method comprises obtaining (2) a metal foil (12) onto which the graphene layer (11) is provided, stabilizing the graphene layer (11) by applying (4) a layer (13) of a cellulose-based polymer onto the graphene layer (11), and placing (5) the metal foil (12) with the graphene and the polymer layers in or on an etching solution (25) to dissolve the metal foil (12) supporting the graphene layer (11). The method comprises diluting and/or neutralizing (6) the etching ...

The disclosed technology generally relates to preparing two-dimensional material layers, and more particularly to releasing a graphene layer from a template substrate. According to an aspect, a method of releasing a graphene layer includes providing a template substrate on which the graphene layer is provided, the method comprising: subjecting the graphene layer and the template substrate to a water treatment by soaking the graphene layer and the template substrate in water such that water is intercalated between the template substrate and the graphene layer; and subjecting the graphene layer ...

According to an aspect of the present inventive concept there is provided method for releasing a graphene layer from a template substrate on which the graphene layer is provided, the method comprising: subjecting the graphene layer and the template substrate to a water treatment by soaking the graphene layer and the template substrate in water such that water is intercalated between the template substrate and the graphene layer; and subjecting the graphene layer and the template substrate to a delamination process, thereby releasing the graphene layer from the template substrate.

A semiconductor device comprising a graphene layer, a graphene oxide layer overlaying the graphene layer, and a high-k dielectric layer overlaying the graphene oxide layer is provided, as well as a method for producing the same. The method results in a graphene chemical functionalization that efficiently and uniformly seeds ALD growth, preserves the underlying graphene structure, and achieves desirable dielectric properties such as low leakage current and high capacitance.

A method for transferring a graphene layer (1) from a metal substrate (2) to a second substrate (3) comprising: a. Providing a graphene layer (1) on said metal substrate (2), b. Adsorbing hydrogen atoms on said metal substrate (2) by passing protons through said graphene layer (1), c. Treating said metal substrate (2) having adsorbed hydrogen atoms thereon in such a way as to form hydrogen gas from said adsorbed hydrogen atoms, thereby detaching said graphene layer (1) from said metal substrate (2), d. Transferring said graphene layer (1) to said second substrate (3), and e. Optionally ...

A method for transferring a graphene layer from a metal substrate to a second substrate is provided comprising: providing a graphene layer on the metal substrate, adsorbing hydrogen atoms on the metal substrate by passing protons through the graphene layer, treating the metal substrate having adsorbed hydrogen atoms thereon in such a way as to form hydrogen gas from the adsorbed hydrogen atoms, thereby detaching the graphene layer from the metal substrate, transferring the graphene layer to the second substrate, and optionally reusing the metal substrate by repeating the aforementioned steps.

A semiconductor device comprising: —� A graphene layer (2), —� A graphene oxide layer (3) overlaying said graphene layer, —� A high-k dielectric layer (8) overlaying said graphene oxide layer as well as a method for producing the same are disclosed.

A bilayer graphene tunneling field effect transistor comprising: a. A bilayer graphene layer, and b. At least a top gate electrode and a bottom gate electrode, wherein said at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon appropriate biasing of the gate electrodes: i. a source region, ii. a channel region, and iii. a drain region.

A bilayer graphene tunnelling field effect transistor is provided comprising a bilayer graphene layer, and at least a top gate electrode and a bottom gate electrode, wherein the at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon appropriate biasing of the gate electrodes: a source region, a channel region, and a drain region.