A study of blister formation in ALD Al2O3 grown on silicon KU Leuven
This work investigates the formation of blisters during annealing an Al2O3 film grown by atomic layer deposition (ALD) on Si. This blistering phenomenon is shown to occur under an external load in the presence of a tensile residual stress: the total membrane stress is a super-imposition of the residual stress of the pre-stressed film and a concomitant stress due to change of blister profile. In the case of this Si/Al2O3 system, the film is ...