Chemical vapour deposition of Si:C and Si:C:P films – evaluation of material quality as a function of C content, carrier gas and doping KU Leuven
© 2015 Elsevier B.V. Abstract Incorporation of source-drain stressors (S/D) for FinFETs to boost the channel mobility is a promising scaling approach. Typically SiGe:B S/D stressors are used for p FinFETs and Si:C:P S/D stressors for n FinFETs. The deposition of such Si:C:P S/D stressors requires a low thermal budget to freeze the C in substitutional sites and also to avoid problems associated with surface reflow of Si fins. In this work, we ...