Researcher
Marc Heyns
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → Today - Surface and Interface Engineered Materials (Division)
Member
From1 Jan 2012 → 31 Jul 2020 - Department of Materials Engineering (Department)
Member
From1 Oct 2007 → 31 Dec 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 2005 → 30 Sep 2007
Projects
1 - 10 of 28
- OPERANDO: In-situ observations of the dynamic processes inside the atomic resolution transmission electron microscopeFrom1 May 2020 → TodayFunding: FWO Medium Size Research Infrastructure
- Magnetoacoustic wave devices for ultralow power spintronicsFrom19 Jun 2019 → TodayFunding: FWO Strategic Basic Research Grant
- 2D Materials: Theoretical study of Magnetic and Contact propertiesFrom7 Dec 2018 → 20 Oct 2023Funding: Own budget, for example: patrimony, inscription fees, gifts
- Micromagnetic simulations for boolean and non-boolean logicFrom1 Sep 2018 → 31 Dec 2022Funding: FWO Strategic Basic Research Grant
- Interface Engineering for Performance Enhancement in 2D Field Effect TransistorsFrom3 Aug 2018 → 14 Mar 2024Funding: Own budget, for example: patrimony, inscription fees, gifts
- Understanding Interface Interactions in Graphene-Ruthenium Hybrids for Next Generation InterconnectsFrom6 Nov 2017 → 12 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Design and Characterization of Quantum Sillicon-Based Devices for Semiconducting Qubit Implementation.From1 Oct 2017 → 31 Mar 2022Funding: FWO Strategic Basic Research Grant
- Fundamental challenges for two dimensional semiconductorsFrom1 Oct 2017 → 30 Sep 2021Funding: Fund Recuperation Fiscal Exemption
- Design and Characterization of Quantum Devices for Superconducting Qubit ImplementationFrom20 Sep 2017 → 19 Aug 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs SystemFrom23 Aug 2017 → 11 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
511 - 520 of 534
- Dielectric response of Ta2O5, Nb2O5 and NbTaO5 from first-principles investigations
Authors: Stefan De Gendt, Marc Heyns, Jorge Kittl
Pages: 729 - 737 - Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect
Authors: Stefan De Gendt, Marc Heyns
Pages: 1647 - 1656 - An assessment of the mobility degradation induced by remote charge scattering
Authors: Stefan De Gendt, Marc Heyns
- Enhancement of acoustic heating during nucleation of acoustic cavitation inside an ultrasonic reactor cavity
Authors: Marc Hauptmann, Steven Brems, Elisabeth Camerotto, XiuMei Xu, Herbert Struyf, Paul Mertens, Marc Heyns, Stefan De Gendt, Christ Glorieux, Walter Lauriks
Pages: 1 - 8 - Capacitance-Voltage (CV) Characterization of GaAs-Oxide Interfaces
Authors: Han Chung Lin, Koen Martens, Clement Merckling, Marc Heyns
Pages: 507 - 519 - Material-device-circuit co-optimization of 2D material based FETs for ultra-scaled technology nodes
Authors: Tarun Agarwal Kumar, Bart Soree, Iuliana Radu, Praveen Raghavan, Giuseppe Iannaccone, Gianluca Fiori, Marc Heyns, Wim Dehaene
Pages: 5016 - In pursuit of "super"high-k ternary oxides: aqueous CSD and material properties
Authors: Stefan De Gendt, Marc Heyns
Pages: 31 - 36 - Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry
Authors: Suseendran Jayachandran, Annelies Delabie, Arne Billen, Harold Dekkers, Bastien Douhard, Thierry Conard, Johan Meersschaut, Matty Caymax, Wilfried Vandervorst, Marc Heyns
Pages: 251 - 257 - Towards Atomically Controlled Deposition of Two-Dimensional Tungsten Disulfide WS2: An Insight in the Growth Behavior
Authors: Benjamin Groven, Annelies Delabie, Marc Heyns
- Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
Authors: Annelies Delabie, Marco Scarrozza, Marc Heyns
Pages: 1529 - 1535
Patents
1 - 7 of 7
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)
- A bilayer graphene tunneling field effect transistor (Inventor)
- Bilayer graphene tunneling field effect transistor (Inventor)
- Graphene-based semiconductor device (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)