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Researcher
Marc Heyns
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → Today - Surface and Interface Engineered Materials (Division)
Member
From1 Jan 2012 → 31 Jul 2020 - Department of Materials Engineering (Department)
Member
From1 Oct 2007 → 31 Dec 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 2005 → 30 Sep 2007
Projects
1 - 10 of 28
- OPERANDO: In-situ observations of the dynamic processes inside the atomic resolution transmission electron microscopeFrom1 May 2020 → 30 Apr 2024Funding: FWO Medium Size Research Infrastructure
- Magnetoacoustic wave devices for ultralow power spintronicsFrom19 Jun 2019 → TodayFunding: FWO Strategic Basic Research Grant
- 2D Materials: Theoretical study of Magnetic and Contact propertiesFrom7 Dec 2018 → 20 Oct 2023Funding: Own budget, for example: patrimony, inscription fees, gifts
- Micromagnetic simulations for boolean and non-boolean logicFrom1 Sep 2018 → 31 Dec 2022Funding: FWO Strategic Basic Research Grant
- Interface Engineering for Performance Enhancement in 2D Field Effect TransistorsFrom3 Aug 2018 → 14 Mar 2024Funding: Own budget, for example: patrimony, inscription fees, gifts
- Understanding Interface Interactions in Graphene-Ruthenium Hybrids for Next Generation InterconnectsFrom6 Nov 2017 → 12 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Design and Characterization of Quantum Sillicon-Based Devices for Semiconducting Qubit Implementation.From1 Oct 2017 → 31 Mar 2022Funding: FWO Strategic Basic Research Grant
- Fundamental challenges for two dimensional semiconductorsFrom1 Oct 2017 → 30 Sep 2021Funding: Fund Recuperation Fiscal Exemption
- Design and Characterization of Quantum Devices for Superconducting Qubit ImplementationFrom20 Sep 2017 → 19 Aug 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs SystemFrom23 Aug 2017 → 11 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 557
- Interface Engineering for Performance Enhancement in 2D Field Effect Transistors(2024)
- 2D Materials: Theoretical Study of Magnetic and Contact Properties(2023)
- Unraveling the impact of nano-scaling on silicon field-effect transistors for the detection of single-molecules(2023)Published in: NanoscaleISSN: 2040-3364Issue: 5Volume: 15Pages: 2354 - 2368
- GHz Dynamics of Magnetoelectric Coupling at the Nanoscale(2022)
- Design and Characterization of Quantum Devices for Superconducting Qubit Implementation(2022)
- Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms(2022)Published in: Npj Quantum InformationIssue: 1Volume: 8
- Lifetime Assessment of InxGa1-xAs n-Type Hetero-Epitaxial Layers(2022)Published in: Physica Status Solidi A, Applications and Materials ResearchISSN: 1862-6300Issue: 17Volume: 219
- Development of Reliable High-k Gate Dielectrics at Reduced Thermal Budget, for Integration on III-V Channels with Limited Thermal Stability and Sequential 3D Processing(2022)
- Ferroelectric Switching as an Enabler for Low Power CMOS and Embedded Memory(2022)
- Spintronic Logic Based on Magnetic Domain Walls(2022)
Patents
1 - 7 of 7
- Tunnel field effect transistor device and method for making the device
- Graphene based field effect transistor
- A bilayer graphene tunneling field effect transistor
- Bilayer graphene tunneling field effect transistor
- Graphene-based semiconductor device
- Tunnel field effect transistor device and method for making the device
- Graphene based field effect transistor